Investigation of the Effects of Capping Layer on Optical Gain of Nitride Based Nanostructure Lasers

摘要: In this study, the effects of GaN capping layer on the behaviour of/AlGaN GaN nanostructure based laser is considered. We have employed the self-consistent solution of Poisson and Schrodinger equations for calculation of the energy levels, wave functions and conduction band profile. The impact of different thicknesses of the capping layer has been studied for sheet carrier density and optical gain. The results indicate that, by increasing the thickness of the cap layer, the optical gain decreases.