作者: N Sivagami , D Vanidha , A Arunkumar , A Sivagamasundari Maheswarikuppaiyandi , Nareddula Dastagiri Reddy
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摘要: Nitrogen doping in ZnO is carried out using as the precursor. The evidence of nitrogen replacing Oxygen in ZnO is obtained from XRD (-Increase in the intensity of 002 peak with doping concentration), PL (–presence green emission peak), VSM (-increased Ms value (0.3579emu/g) indicates NO acceptor produced spin polarization conforming Nitrogen substitution at Oxygen site) and Raman spectra-(compared to un-doped ZnO, peaks are found at 200-600cm−1 in doped compounds. XRD clearly reveals increase in the intensity of characteristic peaks 100,002,101compared to un-doped. The increased Ms also indicates origin of FM is due to No acceptors due to Nitrogen doping.