A Study on Fine-Pitch Convertors for Radiation Detectors with Interposers as an Alternative to Through Silicon Via Technology

摘要: Pixel radiation detectors for X-rays and gammarays are commonly built by hybridization of sensor and readout application-specific integrated circuit (ASIC) chips using flip-chip bonding. A typical example is pixelated high-Z semiconductor sensor material (e.g. CdTe) bonded to a matching pixel array on an ASIC to form a hybrid module. Conventionally, the I/O connections of the ASIC for such hybrids are wire bonded to a Printed Circuit Board (PCB) which subsequently is connected to a data acquisition system. The wire bond pads and PCB connections require a considerable amount of the module's footprint and usually protrude at one side of the detector module by approximately 1.5mm. The disadvantage of this practice is that those modules are only suitable for close proximity tiling modules along three sides of the detector (3-side buttable) to form larger sensor areas. In recent years Through-Silicon Via (TSV …