Growth and characterization of lanthanum germanide thin films by the thermal evaporation technique

摘要: Lanthanum germanide (La6Ge) thin films are successfully fabricated using the thermal evaporation technique under a vacuum pressure of 10−5 mbar. The resulting films display an orthorhombic structure, characterized by lattice parameters of a = 8.725 Å, b = 8.063 Å, and c = 5.569 Å. Optical analysis of the La6Ge thin films reveal their high transparency, with an energy bandgap of 3.75±0.04 eV. The bandgap exhibits indirect allowed transitions and featured energy band tails with widths measuring (1.64±0.14) eV. In addition, dielectric dispersion analyses indicate the presence of two dominant dielectric resonance peaks centered at 3.15 and 2.08 eV. Moreover, the La6Ge films demonstrate a terahertz (THz) cutoff frequency of 1.0 THz when illuminated with infrared and visible light. This cutoff frequency increases to 45.6 THz in the ultraviolet range. Furthermore, by utilizing the Drude–Lorentz method, the …