Uniform wafer temperature achievement in unsymmetric chamber environment

摘要: The present disclosure generally relates to a radiation shield for a process chamber which improves Substrate temperature uniformity. The radiation shield may be disposed between a slit valve door of the process chamber and a substrate Support disposed within the process chamber. In some embodiments, the radiation shield may be disposed under a heater of the process chamber. Furthermore, the radiation shield may block radiation and/or heat supplied from the process chamber, and in Some embodiments, the radiation shield may absorb and/or reflect radiation, thus providing improved temperature uniformity as well as improving a planar profile of the substrate.