Different direction of bias voltage on the memristive behaviour of sputtered titania thin film

摘要: This paper presents the effect of different direction of bias voltage on the memristive behaviour of sputtered titania thin films by varying the IV measurement with positive direction of bias voltage ranging from 0V to 5V, 5V to-5V and-5V to 0V (0 V→+ 5 V→-5 V→ 0 V: positive loop) and negative direction of bias voltage ranging from 0V to-5V,-5V to 5V, and 5V to 0V (0 V→-5 V→+ 5 V→ 0 V: negative loop). Titania thin film was deposited by sputtering method sandwiched between Platinum (Pt) and ITO-coated glass substrate to form metal-insulator-metal (MIM) structure which is the fundamental structure of memristive device. Structural and electrical properties of the samples were studied. The result shows that the film thickness decreases as the oxygen flow rate increases during deposition process. Based on the IV characteristics, starting the positive sweep voltage result in the better switching behaviour compared to …