Polysilicon modulator utilizing CMOS-compatible local excimer laser annealing technology

摘要: In this paper, we demonstrated the improvement of response speed of doped-silicon modulators by localized excimer-laser annealing of the active region while preserving the integrity of the intrinsic waveguide. The racetrack modulator after laser annealing exhibits an extinction ratio of nearly 17 dB with a rising /falling time of 0.82/6.87 μs and a π phase shift power Pπ of 27.2 mW. The utilization of a low-temperature deposited polysilicon modulator combined with a localized excimer laser annealing scheme facilitates the monolithic integration of 3D optoelectronic chips.