Investigation of interface state density, series resistance, and diode parameters of Ag/n-InP/In Schottky barrier diodes

摘要: We reported the ideality factor, barrier height, series resistance, and interface state density parameters of the Ag/n-InP/In Schottky diode from current–voltage (I–V) characteristics. We have presented three of many IV measurements. The conventional thermionic emission (TE) theory is used to study the IV characteristics. Every produced diode exhibited rectifying characteristics. As an illustration of the computed parameters, the values for ideality factor, barrier height, saturation current, and series resistance are found to be 2.375, 0.486 eV, 1.95 x10-4 A, and 3.06, respectively. The values of interfacial state density were found to be approximately 10 14 eV-1 cm-2. As an illustration, consider the energy range where the interfacial state density was 9.50 x10 14 eV-1 cm-2 in the 0.307-energy range and 3.77 x10 14 eV-1 cm-2 in the 0.458- energy range.