Study the electrical properties of ZnO/p-Si heterojunction prepared by chemical spray pyrolysis

摘要: In this work prepared ZnO/p-Si heterojunction by using spray pyrolysis method (CSP) from Zinc acetate solution (Zn (CH 3 COO) 2 2H 2 O) on (111) oriented p-type silicon substrate with dimension (1cmx1cm) composed with (0.2 M) at (350 C o), and studying The electrical properties of ZnO/p-Si heterojunction.(IV) characteristic in dark and illumination,(CV) characteristic and The built-in potential (Vbi) is calculated, while from IV measurements, the ideality factor (β), the Rectification Factor (F) and (I photo/I dark) ratio are calculated.