引用次数
引用: 12,548
H-指数: 55
I10-指数 : 282
出版物: 621
Defects in semi-insulating GaAs as indicated by small-angle laser beam scattering
V P Kalinushkin , D I Murin , E M Omeljanovsky , A J Polyakov
Semiconductor Science and Technology 2 ( 6) 379 -381
6
1987
Influence of atomic hydrogen on the lifetime of nonequilibrium carriers in indium antimonide
A. B. Fedortsov , A. Y. Polyakov , E. V. Molodtsova , D. G. Letenko
Soviet physics. Semiconductors 25 ( 12) 1283 -1284
1991
GROWING OF CRYSTALS OF GERMANIUM-DOPED INDIUM ANTIMONIDE FROM A MELT IN A TRANSVERSE MAGNETIC FIELD
V. S. Vekshina , O. V. Nagibin , A. Y. Polyakov , A. N. Popkov
Inorganic Materials 27 ( 12) 2272 -2274
1991
Influence of Ga-halogen bond formation at the interface of nanoporous GaN photoelectrodes for enhanced photoelectrochemical water splitting efficiency
Periyayya Uthirakumar , Periyayya Uthirakumar , In Hwan Lee , A. Y. Polyakov
Applied Surface Science 547 149105
2021
Estimations of activation energy for dislocation mobility in p-GaN
In Hwan Lee , E. B. Yakimov , E. B. Yakimov , V. I. Orlov
ECS Journal of Solid State Science and Technology 10 ( 2) 026004
2021
Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells
S. J. Pearton , In Hwan Lee , V. N. Murashev , A. V. Chernykh
Journal of Alloys and Compounds 868 159211
2021
On the relation between mobile ion kinetics, device design, and doping in double-cation perovskite solar cells
A. S. Shikoh , D. S. Saranin , A. Y. Polyakov , S. I. Didenko
Applied Physics Letters 118 ( 9) 093501
2021
SEM studies of nonuniformieties and defects in GaN and AlGaN epitaxial films
Joan Marie Redwing , M. Skowronski , M. Shin , A. V. Govorkov
Izvestiya Akademii Nauk. Ser. Fizicheskaya 62 ( 3) 471 -476
1998
Parasitic p–n junctions formed at V-pit defects in p-GaN
In Hwan Lee , E. B. Yakimov , A. V. Chernykh , A. Y. Polyakov
Journal of Applied Physics 129 ( 15) 155702
1
2021
Experimental estimation of electron–hole pair creation energy in β-Ga2O3
S. J. Pearton , E. B. Yakimov , E. B. Yakimov , F. Ren
Applied Physics Letters 118 ( 20) 202106
2021
Residual impurities and native defects in 6H‐SiC bulk crystals grown by halide chemical-vapor deposition
S. W. Huh , H. J. Chung , S. Nigam , A. Y. Polyakov
Journal of Applied Physics 99 ( 1) 013508
19
2006
Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
A. Y. Polyakov , N. B. Smirnov , A. V. Govorkov , H. Amano
Applied Physics Letters 98 ( 7) 072104
41
2011
Optical properties of GaAs1−xNxalloys grown by molecular beam epitaxy
J. Alam , A. E. Botchkarev , J. A. Griffin , N. B. Smirnov
Philosophical Magazine 86 ( 23) 3477 -3486
3
2006
Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy
A. Y. Polyakov , N. B. Smirnov , A. V. Govorkov , M. Shin
Journal of Applied Physics 84 ( 2) 870 -876
103
1998
Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures
A. Y. Polyakov , Lee-Woon Jang , Dong-Seob Jo , In-Hwan Lee
Journal of Applied Physics 111 ( 3) 033103
3
2012
Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga2O3 (Mg)
A. Y. Polyakov , N. B. Smirnov , I. V. Shchemerov , E. B Yakimov
ECS Journal of Solid State Science and Technology 8 ( 7)
34
2019
Effects of hydrogen plasma treatment condition on electrical properties of β-Ga2O3
A. Y. Polyakov , In-Hwan Lee , N. B. Smirnov , E. B. Yakimov
ECS Journal of Solid State Science and Technology 8 ( 11) 661
1
2019
Deep electron traps responsible for higher quantum efficiency in improved gan/ingan light emitting diodes embedded with sio2 nanoparticles
A. Y. Polyakov , N. B. Smirnov , E. B. Yakimov , Han-Su Cho
ECS Journal of Solid State Science and Technology 5 ( 10)
13
2016
Gate-Lag in AlGaN/GaN High Electron Mobility Transistors: A Model of Charge Capture
A. Y. Polyakov , N. B. Smirnov , I. V. Shchemerov , Fan Ren
ECS Journal of Solid State Science and Technology 6 ( 11)
7
2017
Nonuniformities of electrical resistivity in undoped 6H-SiC wafers
Q. Li , A. Y. Polyakov , M. Skowronski , E. K. Sanchez
Journal of Applied Physics 97 ( 11) 113705
16
2005