Residual impurities and native defects in 6H‐SiC bulk crystals grown by halide chemical-vapor deposition
作者： S. W. Huh , H. J. Chung , S. Nigam , A. Y. Polyakov , Q. Li
DOI: 10.1063/1.2150593
关键词: Analytical chemistry 、 Halide 、 Impurity 、 Electrical resistivity and conductivity 、 Chemistry 、 Deposition (law) 、 Chemical vapor deposition 、 Nitrogen 、 Photoluminescence 、 Deep-level transient spectroscopy 、 General Physics and Astronomy
摘要: A variety of defect-sensitive techniques have been employed to detect, identify, and quantify the residual impurities native defects in high-purity (undoped) 6H‐SiC crystals grown by halide chemical-vapor deposition technique. The incorporation efficiencies N B are determined site-competition effect. Most notably, material with low levels (∼1014cm−3) can be produced. In addition, nitrogen concentrations obtained from Hall-effect measurements low-temperature photoluminescence systematically lower than those secondary-ion-mass spectrometry. difference is ascribed forming complexes defects. energy level this complex approximately 0.27eV below conduction band. Four major electron traps activation energies 0.4, 0.5, 0.65, 1eV five hole 0.3, 0.55, 0.85eV were observed deep-level transient spectroscopy. concentration all decreased stro...
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