Kok-Keong (KK) Lew
机构: University of Illinois, The Pennsylvania State University, Naval Research Laboratory
每年引用次数
引用次数
引用: 3,440
H-指数: 27
I10-指数 : 36
出版物: 75
Study on Axial and Radial Heterostructures of Si-Ge and Si-SiGe Nanowires
L Pan , K-K Lew , J Redwing , E Dickey
Microscopy and Microanalysis 11 ( S02) 1722 -1723
4
2005
Diameter Dependence of Ge-doped Si Nanowires Fabricated via Vapor-Liquid-Solid Growth
TE Clark , X Zhang , K-K Lew , L Pan
Microscopy and Microanalysis 13
1
2007
Bicrystalline Silicon Nanowires
A. H. Carim , K.-K. Lew , J. M. Redwing
Advanced Materials 13 ( 19) 1489 -1491
74
2001
Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions
B. L. VanMil , R. E. Stahlbush , R. L. Myers-Ward , K.-K. Lew
Journal of Vacuum Science & Technology B 26 ( 4) 1504 -1507
30
2008
Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers
S. I. Maximenko , J. A. Freitas , R. L. Myers-Ward , K.-K. Lew
Journal of Applied Physics 108 ( 1) 013708
27
2010
Fabrication of Cobalt Silicide Nanowire Contacts to Silicon Nanowires
Ahmad M. Mohammad , Soham Dey , K.-K. Lew , J. M. Redwing
Journal of The Electrochemical Society 150 ( 9)
17
2003
Investigation of deep levels in nitrogen doped 4H-SiC epitaxial layers grown on 4° and 8° off-axis substrates
R. L. Myers-Ward , B. L. VanMil , K.-K. Lew , P. B. Klein
Journal of Applied Physics 108 ( 5) 054906
3
2010
Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations
P. B. Klein , R. Myers-Ward , K.-K. Lew , B. L. VanMil
Journal of Applied Physics 108 ( 3) 033713
45
2010
X-ray diffraction study of crystal plane distortion in silicon carbide substrates
M. A. Mastro , M. Fatemi , D. K. Gaskill , K.-K. Lew
Journal of Applied Physics 100 ( 9) 093510
3
2006
Vapor–Liquid–Solid Growth of Silicon–Germanium Nanowires
K.-K. Lew , L. Pan , E.C. Dickey , J.M. Redwing
Advanced Materials 15 ( 24) 2073 -2076
93
2003
Diameter‐Controlled Synthesis of Silicon Nanowires Using Nanoporous Alumina Membranes
T. E. Bogart , S. Dey , K.-K. Lew , S. E. Mohney
Advanced Materials 17 ( 1) 114 -117
85
2005
Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8
B.L. VanMil , K.-K. Lew , R.L. Myers-Ward , R.T. Holm
Journal of Crystal Growth 311 ( 2) 238 -243
24
2009
Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth
Tsung-ta Ho , Yanfeng Wang , Bangzhi Liu , Sarah Eichfeld
international semiconductor device research symposium 1 -2
2007
Electrical properties of p- and n-type silicon nanowires
Yanfeng Wang , M. Cabassi , Tsung-Ta Ho , Kok-Keong Lew
device research conference 23 -24
2
2004
Top-gated field effect devices using oxidized silicon nanowires
Yanfeng Wang , Kok-Keong Lew , J. Mattzela , J. Redwing
device research conference 1 159 -160
5
2005
Inversion-mode Operation of Thermally-oxidized Modulation-doped Silicon Nanowire Field Effect Devices
Yanfeng Wang , Tsung-ta Ho , Sarah Dilts , Kok-keong Lew
device research conference 175 -176
5
2006
High-Performance Nanomechanical Oscillators Fabricated by Bottom-up Integration of Silicon Nanowires
Mingwei Li , Rustom Bhiladvala , James Sioss , Kok-keong Lew
device research conference 185 -186
2
2006
Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions
R. E. Stahlbush , B. L. VanMil , R. L. Myers-Ward , K-K. Lew
Applied Physics Letters 94 ( 4) 041916
97
2009
ELECTRICAL CHARACTERIZATION OF SILICON NANOWIRE PN JUNCTIONS
Eric Dattoli , Tsung-ta Ho , Yanfeng Wang , KK Lew
NSF EE RUE Penn Stat Annual Research Journal 3
2
2005
Plasma-assisted oxidation for surface passivation of silicon nanowires
Daniel J Black , Jim Mattzela , Tsung-ta Ho , Yanfeng Wang
Annual Research Journal
2
2004