Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions
作者： B. L. VanMil , R. E. Stahlbush , R. L. Myers-Ward , K.-K. Lew , C. R. Eddy
DOI: 10.1116/1.2918317
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摘要: In situ growth interrupts were executed during the of 8° off-cut 4H-SiC epitaxial layers to determine dependence efficiency for converting basal plane dislocations (BPDs) threading edge (TEDs) on interrupt temperature. Three samples grown with 15min near middle a 30–40μm thick, n-type doped layer at 1400, 1500, and 1580°C. Ultraviolet photoluminescence (UVPL) mapping these reveals BPDs permits observation how defects extend into through epilayer. From lateral length in UVPL wafer map, it was determined whether or not BPD converted TED interface. The percentage that 1580°C 20%, 28%, 51%, respectively. proposed cause higher conversion rate temperature is etching occurs this temperature, presumed there ...
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