Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs
作者： Qingchun Jon Zhang , Anant K. Agarwal
关键词: Current injection technique 、 Gate turn-off thyristor 、 Power electronics 、 Schottky diode 、 Optoelectronics 、 Power semiconductor device 、 Insulated-gate bipolar transistor 、 Bipolar junction transistor 、 Transistor 、 Materials science
摘要: … Figure 26 compares the carrier distribution profiles between IGBTs with and without CSL … is observed in IGBT with a CSL indicating injection enhancement. However, when CSL extends …
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