Optical Properties of Si-Integrated Group-IV Light Emitting Diodes
Charutha Senaratne , Jose Menendez , Chi Xu , James Gallagher
Bulletin of the American Physical Society
2015
Pseudomorphic growth of Ge$_{\mathrm{1-}}_{y}$Sn$_{y}$ (y $=$ 0.06 - 0.17) films and devices on Ge/Si(100) \textit{via} chemical precursors
Charutha Senaratne , Patrick Sims , Jose Menendez , Chi Xu
Bulletin of the American Physical Society
2017
GeSn pin diodes: from pure Ge to direct-gap materials
Charutha Senaratne , Jose Menendez , Chi Xu , Toshihiro Aoki
APS 2015
2015
Mid-IR GeSn alloys with narrow band gaps beyond 8 μm
Jose Menendez , Chi Xu , John Kouvetakis
Bulletin of the American Physical Society
2020
Pseudomorphic growth of Ge 1-y Sn y (y = 0.06 - 0.17) films and devices on Ge/Si(100) via chemical precursors
Charutha Senaratne , Jose Menendez , Chi Xu , John Kouvetakis
APS March Meeting Abstracts 2017
2017
Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries.
Chi Xu , Patrick M. Wallace , Dhruve A. Ringwala , José Menéndez
ACS Applied Materials & Interfaces 10 ( 43) 37198 -37206
2018
Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys
Chi Xu , Charutha L. Senaratne , John Kouvetakis , José Menéndez
Solid-state Electronics 110 76 -82
14
2015
Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents
Chi Xu , Dhruve Ringwala , Duo Wang , Lei Liu
Chemistry of Materials 31 ( 23) 9831 -9842
7
2019
Compositional dependence of the absorption edge and dark currents in Ge1−x−ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4
R. T. Beeler , Chi Xu , D. J. Smith , G. Grzybowski
Applied Physics Letters 101 ( 22) 221111
30
2012
Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n -Type Ge
Chi Xu , Nalin S. Fernando , Stefan Zollner , John Kouvetakis
Physical Review Letters 118 ( 26) 267402 -267402
6
2017
New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: the tetragermane case
Chi Xu , Richard T Beeler , Liying Jiang , Gordon Grzybowski
Semiconductor Science and Technology 28 ( 10) 105001
23
2013
In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: Fundamental properties and device prototypes
Chi Xu , J D Gallagher , P M Wallace , C L Senaratne
Semiconductor Science and Technology 30 ( 10) 105028
6
2015
Non-conventional routes to SiGe:P/Si(100) materials and devices based on -SiH3 and -GeH3 derivatives of phosphorus: synthesis, electrical performance and optical behavior
Chi Xu , J D Gallagher , P Sims , D J Smith
Semiconductor Science and Technology 30 ( 4) 045007
8
2015
Molecular epitaxy of pseudomorphic Ge1−y Sn y (y = 0.06–0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4
P M Wallace , C L Senaratne , Chi Xu , P E Sims
Semiconductor Science and Technology 32 ( 2) 025003
7
2017
Frustrated incomplete donor ionization in ultra-low resistivity germanium films
Chi Xu , C. L. Senaratne , J. Kouvetakis , J. Menéndez
Applied Physics Letters 105 ( 23) 232103
17
2014
Molecular synthesis of high-performance near-IR photodetectors with independently tunable structural and optical properties based on Si-Ge-Sn.
Chi Xu , Richard T. Beeler , Gordon J. Grzybowski , Andrew V.G. Chizmeshya
Journal of the American Chemical Society 134 ( 51) 20756 -20767
29
2012
Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases
Chi Xu , Charutha L. Senaratne , Robert J. Culbertson , John Kouvetakis
Journal of Applied Physics 122 ( 12) 125702
43
2017
Crystalline (Al1-xBx)PSi3 and (Al1-xBx)AsSi3 tetrahedral phases via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As)
Patrick Sims , Toshihiro Aoki , Ruben Favaro , Patrick Wallace
Chemistry of Materials 27 ( 8) 3030 -3039
10
2015
Synthesis and Characterization of Monocrystalline GaPSi3 and (GaP)y(Si)5-2y Phases with Diamond-like Structures via Epitaxy-Driven Reactions of Molecular Hydrides
Patrick E. Sims , Chi Xu , Christian D. Poweleit , José Menéndez
Chemistry of Materials 29 ( 7) 3202 -3210
1
2017
Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge3H8, Ge4H10)
Gordon Grzybowski , Liying Jiang , Richard T. Beeler , Tylan Watkins
Chemistry of Materials 24 ( 9) 1619 -1628
47
2012