8
2005
Raman Study of Semiconducting ZnO and SnO 2 Nanobelts

Z. L. Wang , Z. W. Pan , K. McGuire , J. M. Menéndez
APS

2002
Thermal expansivity ofGe1−ySnyalloys

J. Menéndez , R. Roucka , J. Kouvetakis , A. V. G. Chizmeshya
Physical Review B 81 ( 24)

14
2010
Resonance Raman Study of the Local Carbon Mode in Si_1-yC y Alloys

N. G. Cave , J. W. Christiansen , N. D. Theodore , J. Menéndez
APS March Meeting Abstracts

1997
1996
Vibrational Frequencies in Buckminsterfullerene

J. Menéndez , J. D. Lorentzen , J. B. Page , S. Guha
APS

1997
Raman Imaging of SWNTs

C. Poweleit , J. Menéndez , J. D. Lorentzen , L. McNeil
APS

2000
Photoluminescence Studies of Si_1-x-yGe_xC y Alloys.

J. D. Lorentzen , J. Menéndez , G. H. Loechelt
APS

1996
Raman study of Si_1-x-yGe_xC y alloys grown by CVD from Si_4C building blocks

D. Nesting , J. Menéndez , J. D. Lorentzen , D. Chandrasekhar
APS

1998
Influence of the Local Micro Structure on the Macroscopic Properties of Si_1-x-yGe_xC y Alloys.

O. F. Sankey , J. Menéndez , J. D. Lorentzen , M. Meléndez-Lira
APS

1997
Raman and Infrared Intensities in Fullerenes

J. Menéndez , J. B. Page
APS March Meeting Abstracts

1998
High Resolution Raman spectroscopy of GaAs, AlAs, and GaAs-AlAs superlattices

C. D. Poweleit , J. Menéndez , M. Canonico , M. Lopez
APS March Meeting Abstracts

1997
Direct observation of interface asymmetry in GaAs-AlAs superlattices grown by MBE.

J. Menéndez , K. W. West , M. McCartney , L. N. Pfeiffer
APS March Meeting Abstracts

1996
Carbon distribution in Si_1-yC y alloys.

M. Meléndez , J. B. Page , O. F. Sankey , W. Windl
APS March Meeting Abstracts

1996
Resonance Raman scattering in CdTe‐ZnTe superlattices

J. Menéndez , A. Pinczuk , J. P. Valladares , R. D. Feldman
Applied Physics Letters 50 ( 16) 1101 -1103

47
1987
Direct versus indirect optical recombination in Ge films grown on Si substrates

G. Grzybowski , R. Roucka , J. Mathews , L. Jiang
Physical Review B 84 ( 20) 205307

58
2011
Light scattering in GaAs parabolic quantum wells

J. Menéndez , A. Pinczuk , A.C. Gossard , M.G. Lamont
Solid State Communications 61 ( 10) 601 -605

18
1987
Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

R. Roucka , J. Mathews , R. T. Beeler , J. Tolle
Applied Physics Letters 98 ( 6) 061109

84
2011
Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap

J. Menéndez , J. Kouvetakis
Applied Physics Letters 85 ( 7) 1175 -1177

157
2004