José Menéndez
机构: Professor of Physics, Arizona State University
每年引用次数
引用次数
引用: 13,647
H-指数: 59
I10-指数 : 179
出版物: 373
Strategies for the synthesis of highly concentrated Si1−yCy diamond-structured systems
D. Chandrasekhar , J. McMurran , David J. Smith , J. Kouvetakis
Applied Physics Letters 72 ( 17) 2117 -2119
16
1998
Raman scattering in Ge1−ySny alloys
V.R. D’Costa , J. Tolle , R. Roucka , C.D. Poweleit
Solid State Communications 144 ( 5) 240 -244
76
2007
Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1−xSix/Si(100) materials using nanoscale building blocks
Y.-Y. Fang , V.R. D’Costa , J. Tolle , J.B. Tice
Solid State Communications 149 ( 1) 78 -81
1
2009
Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes
C. L. Senaratne , P. M. Wallace , J. D. Gallagher , P. E. Sims
Journal of Applied Physics 120 ( 2) 025701
26
2016
Characterization of Bulk Semiconductors Using Raman Spectroscopy
J. Menéndez
Springer, Berlin, Heidelberg 55 -103
19
2000
Strain-free Ge /GeSiSn quantum cascade lasers based on L-valley intersubband transitions
G. Sun , H. H. Cheng , J. Menéndez , J. B. Khurgin
Applied Physics Letters 90 ( 25) 251105
69
2007
Frustrated incomplete donor ionization in ultra-low resistivity germanium films
Chi Xu , C. L. Senaratne , J. Kouvetakis , J. Menéndez
Applied Physics Letters 105 ( 23) 232103
17
2014
Evidence for solid-state effects in the electronic structure of C60 films: a resonance-Raman study
K. Sinha , J. Menéndez , R.C. Hanson , G.B. Adams
Chemical Physics Letters 186 ( 2) 287 -290
37
1991
Raman cross section for the pentagonal-pinch mode in buckminsterfullerene C60
J.D. Lorentzen , S. Guha , J. Menéndez , P. Giannozzi
Chemical Physics Letters 270 ( 1) 129 -134
16
1997
Thermal expansivity of Ge{sub 1-y}Sn{sub y} alloys
R. Roucka , Y.-Y. Fang , J. Kouvetakis , A. V. G. Chizmeshya
Physical Review B 81 ( 24) 245214
15
2010
(Si)5−2y(AlP)y alloys assembled on Si(100) from Al-P-Si3 building units
T Watkins , L Jiang , C Xu , AVG Chizmeshya
Applied Physics Letters 100 ( 2) 022101
13
2012
Molecular Strategies for Configurational Sulfur Doping of Group IV Semiconductors Grown on Si(100) Using S(MH3)2 (M = Si,Ge) Delivery Sources: An Experimental and Theoretical Inquiry
J. Kouvetakis , R. Favaro , G. J. Grzybowski , C. Senaratne
Chemistry of Materials 26 ( 15) 4447 -4458
3
2014
Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries
C. L. Senaratne , J. D. Gallagher , T. Aoki , J. Kouvetakis
Chemistry of Materials 26 ( 20) 6033 -6041
32
2014
Thermoelastic and optical properties of thick boride templates on silicon for nitride integration applications
R. Roucka , V. R. D’Costa , Y.-J. An , M. Canonico
Chemistry of Materials 20 ( 4) 1431 -1442
16
2008
Synthesis and Properties of Monocrystalline Al(As1–xPx)Si3 Alloys on Si(100)
G. Grzybowski , T. Watkins , R.T. Beeler , L. Jiang
Chemistry of Materials 24 ( 12) 2347 -2355
10
2012
Characterization of carbon nanotubes using Raman excitation profiles
M. Canonico , G. B. Adams , C. Poweleit , J. Menéndez
Physical Review B 65 ( 20) 201402
27
2002
Structural and optical properties of ZrB2 and HfxZr1−xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates
R. Roucka , Y.-J. An , A.V.G. Chizmeshya , V.R. D’Costa
Solid-state Electronics 52 ( 11) 1687 -1690
6
2008
Band lineups at the GaSb-AlxGa1―xSb hetero-junction: experimental evidence for a new common anion rule
J. Menéndez , A. Pinczuk , D.J. Werder , J.P. Valladares
Solid State Communications 61 ( 11) 703 -706
47
1987
Direct integration of active Ge1−x(Si4Sn)x semiconductors on Si(100)
Junqi Xie , J. Tolle , V. R. D’Costa , A. V. G. Chizmeshya
Applied Physics Letters 95 ( 18) 181909
29
2009
Laser-frequency dependence of Raman modes in GaAsAlAs superlattices
G.S. Spencer , J. Menéndez , L.N. Pfeiffer , K.W. West
Solid State Communications 97 ( 1) 21 -25
1
1996