Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes
作者： C. L. Senaratne , P. M. Wallace , J. D. Gallagher , P. E. Sims , J. Kouvetakis
DOI: 10.1063/1.4956439
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摘要: Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%–16% range. A unique aspect this approach is compatible reactivity compounds at ultra-low temperatures, allowing efficient control systematic tuning alloy composition beyond direct gap threshold. This crucial property allows formation thick supersaturated layers device-quality material properties. Diodes up 14% initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1-ySny/p-Ge1-zSnz type structures a single defected interface. The devices exhibited sizable electroluminescence good rectifying behavior as evidenced by low dark currents I-V measurements. working diodes higher content 16% was implemented more advanced n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architectu...
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