José Menéndez
机构: Professor of Physics, Arizona State University
每年引用次数
引用次数
引用: 13,647
H-指数: 59
I10-指数 : 179
出版物: 373
Advances in SiGeSn/Ge Technology
Richard Soref , John Kouvetakis , Jose Menendez
MRS Proceedings 958 ( 1) 13 -24
19
2006
Raman Scattering In II-VI Semiconductor Alloys And Superlattices
Jose Menendez
Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology 1055 61 -66
1989
Resonance Raman scattering in semiconductors and semiconductor microstructures
Jose Menendez
International Conference on Modulation Spectroscopy 1286 275 -279
1990
Photoluminescence in Si 1- x- y Ge x C y alloys
JD Lorentzen , GH Loechelt , M Meléndez-Lira , Jose Menendez
Applied physics letters 70 ( 18) 2353 -2355
17
1997
Carbon dependence of Raman mode frequencies in Si 1- x- y Ge x C y alloys
M Meléndez-Lira , Jose Menendez , W Windl , OF Sankey
Physical Review B 54 ( 18) 12866
61
1996
Compositional dependence of the direct and indirect band gaps in Ge1- ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials
L Jiang , JD Gallagher , Charutha Lasitha Senaratne , Toshihiro Aoki
Semiconductor Science and Technology 29 ( 11) 115028
118
2014
Optical Vibrational and Structural Properties of Ge~ 1~-~ xSn~ x Alloys by UHV-CVD
Jennifer Taraci , S Zollner , MR McCartney , Jose Menendez
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 692 631 -636
7
2002
New GeSi doping strategies based on P (SiH 3) 3 for next-generation CMOS technologies
Andrew Chizmeshya , Chi Xu , James Gallagher , Patrick Sims
APS March Meeting Abstracts 2015 Q14. 005 -Q14. 005
2015
Ge 1-y Sn y (y= 0.01-0.10) alloys on Ge-buffered Si
CL Senaratne , JD Gallagher , Liying Jiang , Toshihiro Aoki
Journal of Applied Physics 116 ( 13)
2014
Nanoscale assembly of silicon-like [Al (As1-x N x)] y Si5-2y alloys
L Jiang , PE Sims , G Grzybowski , RT Beeler
Physical Review B-Condensed Matter and Materials Physics 88 ( 4)
2013
Anomalous LO phonon lifetime in AlAs.
M Canonico , C Poweleit , Jose Menendez , A Debernardi
Physical Review Letters 88 ( 21) 215502 -215502
13
2002
Doping and strain dependence of the electronic band structure in Ge and GeSn alloys
Chi Xu , James Gallagher , Charutha Senaratne , Christopher Brown
APS March Meeting Abstracts 2015 L14. 011 -L14. 011
2
2015
Analysis of critical points in temperature dependent and time resolved ellipsometry spectra of Ge using digital filtering
Carola Emminger , Farzin Abadizaman , Nuwanjula Samarasingha Arachchige , Jose Menendez
APS March Meeting Abstracts 2021 J59. 004 -J59. 004
2021
GeSn alloys with mid-IR direct band gaps
Jose Menendez , Chi Xu , John Kouvetakis , Nuwanjula Samarasingha Arachchige
APS March Meeting Abstracts 2021 F58. 001 -F58. 001
2021
Evaluation of the electronic band structure of a new semiconductor ternary using Ge, Si, and Sn
Candi S Cook , Stefan Zollner , Jose Menendez , AVG Chizmeshya
APS March Meeting Abstracts 2004 A11. 011 -A11. 011
2004
Influence of temperature, strain, alloy composition, doping, and film thickness on the dielectric function of semiconductors
Stefan Zollner , Jose Menendez
Hybrid Group IV/III-V Semiconductor Structures
John Kouvetakis , Jose Menendez
464
2011
Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
John Kouvetakis , Jose Menendez , John Tolle , Ling Liao
339
2009
Molecular approaches to p-and n-nanoscale doping of Ge1− ySny semiconductors: Structural, electrical and transport properties
Junqi Xie , J Tolle , VR D’Costa , C Weng
Solid-state electronics 53 ( 8) 816 -823
47
2009
Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-yz-buffered silicon
Richard A Soref , Jose Menendez , John Kouvetakis
37
2005