Manfred Helm
机构: Institute Director at Helmholtz-Zentrum Dresden-Rossendorf, and Professor of Physics, TU Dresden
主页: hzdr.de
每年引用次数
引用次数
引用: 16,462
H-指数: 63
I10-指数 : 333
出版物: 829
Hot electron emission in semiconductors(Final Technical Report No. 7, 26 Nov. 1984- 29)(Feb. 1988)
ERICH GORNIK , KARL UNTERRAINER , MANFRED HELM
1988
BG=> QH? L> LLBHG< A: BKL
Derek Th2B Abbott , Stefano Th2A Alberti , Rene Th2C Beigang , Alexey Th4B Belyanin
Long wavelength infrared emitters based on quantum wells and superlattices
Manfred Helm ,
Gordon & Breach Science Pub.
29
2000
InP nanocrystals on silicon for optoelectronic applications.
Krzysztof Pyszniak , Maciej Oskar Liedke , Arndt Mücklich , Marcin Turek
Nanotechnology 23 ( 48) 485204
27
2012
Defect-induced magnetism in graphite through neutron irradiation
Sibylle Gemming , Gregor Bukalis , Shengqiang Zhou , Elke Arenholz
Physical Review B 90 ( 21) 214435
16
2014
Anisotropy of excitation and relaxation of photogenerated charge carriers in graphene.
Ermin Malic , Martin Mittendorff , Walter A. de Heer , Torben Winzer
Nano Letters 14 ( 3) 1504 -1507
98
2014
Local Formation of InAs Nanocrystals in Si by Masked Ion Implantation and Flash Lamp Annealing
René Hübner , Slawomir Prucnal , Manfred Helm , Yordan M. Georgiev
Physica Status Solidi (c) 14 ( 12)
1
2017
Annual Report 2016 - Institute of Ion Beam Physics and Materials Research
Viton Heera , Peter Zahn , Jürgen Faßbender , Manfred Helm
2017
Engineering telecom single-photon emitters in silicon for scalable quantum photonics.
Yonder Berencén , Georgy V. Astakhov , Manfred Helm , Ulrich Kentsch
Optics Express 28 ( 18) 26111 -26121
5
2020
Photoluminescence dynamics in few-layer InSe
Tommaso Venanzi , Himani Arora , Stephan Winnerl , Alexej Pashkin
arXiv: Mesoscale and Nanoscale Physics
14
2020
Epitaxial Mn5Ge3 (100) layer on Ge (100) substrates obtained by flash lamp annealing
Shengqiang Zhou , Yujia Zeng , Ye Yuan , Ye Yuan
Applied Physics Letters 113 ( 22) 222401
9
2018
Structural and magnetic properties of irradiated SiC
Frans Munnik , Wei Tong , Shengqiang Zhou , Lin Li
Journal of Applied Physics 115 ( 17)
8
2014
Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering
Sibylle Gemming , Sibylle Gemming , Fabian Ganss , Andreas Herklotz
Advanced electronic materials 6 ( 6) 2000184
5
2020
Substrate effect on the resistive switching in BiFeO3 thin films
Stefan Slesazeck , Yao Shuai , Heidemarie Schmidt , Wanli Zhang
Journal of Applied Physics 111 ( 7)
22
2012
Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations
Heidemarie Schmidt , Shengqiang Zhou , Manfred Helm , Danilo Bürger
Applied Physics Letters 95 ( 17) 172103
15
2009
Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt
Yao Shuai , Heidemarie Schmidt , Danilo Bürger , Shengqiang Zhou
Journal of Applied Physics 109 ( 12) 124117
145
2011
Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
Tomasz Dietl , Tomasz Dietl , Shengqiang Zhou , Roman Böttger
Physical Review Materials 1 ( 5) 054401
21
2017
Control of Rectifying and Resistive Switching Behavior in BiFeO3 Thin Films
Stefan Slesazeck , Yao Shuai , Yao Shuai , Heidemarie Schmidt
Applied Physics Express 4 ( 9) 095802
24
2011
The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge
Heidemarie Schmidt , Danilo Bürger , Shengqiang Zhou , Peter Oesterlin
Applied Physics Letters 96 ( 20) 202105
16
2010
Phase Selection in Mn–Si Alloys by Fast Solid‐State Reaction with Enhanced Skyrmion Stability
Kornelius Nielsch , Kornelius Nielsch , Slawomir Prucnal , Lars Rebohle
Advanced Functional Materials 31 ( 15) 2009723
9
2021