Dae-gyu Park
机构: Senior Manager, IBM T.J.Watson Research Center
每年引用次数
引用次数
引用: 6,581
H-指数: 38
I10-指数 : 124
出版物: 221
Effective Schottky Barrier lowering for contact resistivity reduction using silicides as diffusion sources
Zhen Zhang , F. Pagette , C. D'Emic , B. Yang
symposium on vlsi technology 154 -155
4
2010
Plasma nitridation of thin Si layers for GaAs dielectrics
Z. Wang , D. M. Diatezua , D-G. Park , Z. Chen
Journal of Vacuum Science & Technology B 17 ( 5) 2034 -2039
7
1999
Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate
K. Henson , H. Bu , M. H. Na , Y. Liang
international electron devices meeting 1 -4
19
2008
Understanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-κ / metal-gate pFETs
Ren , Park , Yamaoka , Zhu
symposium on vlsi technology 148 -149
2011
Metal‐insulator‐semiconductor structures on p‐type GaAs with low interface state density
Zhi Chen , Dae‐Gyu Park , Francke Stengal , S. Noor Mohammad
Applied Physics Letters 69 ( 2) 230 -232
34
1996
CHARACTERISTICS OF SI3N4/SI/N-GAAS METAL-INSULATOR-SEMICONDUCTOR INTERFACES GROWN ON GAAS(111)B SUBSTRATE
Dae‐Gyu Park , Deda M. Diatezua , Zhi Chen , S. Noor Mohammad
Applied Physics Letters 69 ( 20) 3025 -3027
8
1996
Thermal Stability of Sputter‐Deposited TiSi2 Films with Crystal Orientation
Dae‐Gyu Park , You‐Seok Suh , Sang‐Hyeob Lee , Sam‐Dong Kim
Electrochemical and Solid State Letters 2 ( 12) 642 -644
6
1999
Abnormal oxidation of TiSi2 film in patterned TiSi2/Polysilicon gate stack
S‐Aug Jang , Tae‐Kyun Kim , Jun‐Mo Yang , Tae‐Su Park
Electrochemical and Solid-State Letters 3 ( 11) 511 -511
2000
Suppressed Boron Penetration in p^+ poly-Si/Al_2O_3/Si Metal-Oxide-Semiconductor System by Remote Plasma Nitridation of Al_2O_3 Surface
Heung-Jae CHO , Dae-Gyu PARK , Kwan-Yong LIM , Jung-Kyu KO
Extended abstracts of the... Conference on Solid State Devices and Materials 2001 504 -505
2
2001
Method of forming a metal gate in a semiconductor device using atomic layer deposition process
2007 DG Park , HJ Cho , KY Lim - US Patent 7 , 157
192
2007
TaO_xN_y Gate Dielectric with Improved Thermal Stability
CHO Heung-Jae , PARK Dae-Gyu , YEO In-Seok , ROH Jae-Sung
Extended abstracts of the... Conference on Solid State Devices and Materials 2000 238 -239
2000
Method of creating deep trench capacitor using A P+ metal electrode
Dae-Gyu Park , Jack A. Mandelman , Ramachandra Divakaruni
20
2005
finFETs and methods of making same
Dae-Gyu Park , Xinhui Wang , Thomas Safron Kanarsky , Zhibin Ren
82
2011
Application of cluster beam implantation for fabricating threshold voltage adjusted fets
Dae-Gyu Park , Oleg Gluschenkov , Haizhou Yin
8
2012
Characteristics of Sputtered Ta films by Statistical Method
Cheol-Mo Jeong , Dae-Gyu Park , Seung-Jin Lee , Yu-Seok Seo
Korean Journal of Materials Research 11 ( 6) 492 -497
2001
Ultra-thin hf-doped silicon oxynitride film for high performance cmos applications and method of manufacture
Michael P Chudzik , Dae-Gyu Park , Wenjuan Zhu , Akihisa Sekiguchi
38
2006
Fin field effect transistor including a strained epitaxial semiconductor shell
Dae-Gyu Park , Young-Hee Kim , Kevin K. Chan , Masaharu Kobayashi
8
2016
Shallow extension junction
Effendi Leobandung , Pouya Hashemi , Dae-Gyu Park , Min Yang
4
2016
FDSOI radiation dosimeters
Jeng-Bang Yau , Michael S. Gordon , Kenneth P. Rodbell , Steven J. Koester
international symposium on vlsi technology systems and applications 1 -2
7
2011
Strained Si 1−x Ge x -on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
Pouya Hashemi , Karthik Balakrishnan , Amlan Majumdar , Ali Khakifirooz
symposium on vlsi technology 1 -2
16
2014