Application of cluster beam implantation for fabricating threshold voltage adjusted fets
作者： Dae-Gyu Park , Oleg Gluschenkov , Haizhou Yin
DOI:
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摘要: Semiconductor structures including a high k gate dielectric material that has at least one surface threshold voltage adjusting region located within 3 nm or less from an upper of the are provided. The is formed by cluster beam implant step in which impurity directly driven overlying subsequently removed structure following step.
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