引用次数
引用: 6,295
H-指数: 38
I10-指数 : 105
出版物: 307
Development of High-Voltage Vertical GaN PN Diodes
K. Hobart , M. Ebrish , A. A. Allerman , A. Jacobs
international electron devices meeting
5
2020
Perceived Constraints of Farm Scientists in State Agricultural Universities, West Bengal
Chandan Kumar Panda , S. Chowdhury
Economic Affairs 60 ( 3) 479 -486
2015
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
J. Y. Tsao , S. Chowdhury , M. A. Hollis , D. Jena
Advanced electronic materials 4 ( 1) 1600501
850
2018
P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm
M. Dutta , F.A.M. Koeck , R.J. Nemanich , S. Chowdhury
device research conference 184 -184
10
2015
Enhancing Quality of Learning Experience Through Intelligent Agent in E-Learning
S Bhattacharya , S. , Roy , S.
International Journal of Uncertainty, Fuzziness and Knowledge-Based Systems 25 ( 01) 31 -52
1
2017
Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K
M. Malakoutian , M. Benipal , F. A. Koeck , R. J. Nemanich
IEEE Journal of the Electron Devices Society 8 614 -618
1
2020
m
S. Chowdhury
Design of an aerosol filtration apparatus based on pulse-jet cleaning
A Mukhopadhyay , S Chowdhury , I C Sharma
IJFTR Vol.25(3) [September 2000]
2
2000
94 An Observational Cohort Study to Evaluate Volume and Severity of Emergency General Surgery Admissions During The COVID-19 Pandemic: Is There A “Lockdown” Effect?
E Baker , R McLean , A Musbahi , J Young
British Journal of Surgery 108
2021
Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm−1
S Mandal , M B Kanathila , C D Pynn , W Li
Semiconductor Science and Technology 33 ( 6) 065013
7
2018
Ultra lowqa discharge experiments in the SINP tokamak
A N Sekar Iyengar , S K Majumdar , J Basu , R K Paul
Pramana 39 ( 2) 181 -191
7
1992
N3XT 3D Technology Foundations and Their Lab-to-Fab: Omni 3D Logic, Logic+ Memory Ultra-Dense 3D, 3D Thermal Scaffolding
T Srimani , A Bechdolt , S Choi , C Gilardi
2023 International Electron Devices Meeting (IEDM) 1 -4
2023
High Temperature Diamond Electronics for Actuators and Sensors
RJ Nemanich , M Malakoutian , H Surdi , M Benipal
17th Meeting of the Venus Exploration Group (VEXAG) 17 ( 2193) 8025 -8025
1
2019
Thermal dissipation in stacked devices
WY Woon , Sam Vaziri , CC Shih , I Datye
2023 International Electron Devices Meeting (IEDM) 1 -4
2023
Novel all-around diamond integration with GaN HEMTs demonstrating highly efficient device cooling
R Soman , M Malakoutian , B Shankar , D Field
2022 International Electron Devices Meeting (IEDM) 30.8. 1 -30.8. 4
11
2022
Interlayer Engineering to Achieve< 1 m 2 K/GW Thermal Boundary Resistances to Diamond for Effective Device Cooling
K Woo , M Malakoutian , Y Jo , X Zheng
2023 International Electron Devices Meeting (IEDM) 1 -4
1
2023
20 kV Gallium Nitride Electromagnetic Pulse Arrestor for Grid Reliability.
Robert Kaplar , Andrew A Allerman , Brendan Patrick Gunning , Gregory Pickrell
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States) ( SAND2019-6902PE)
4
2019
Progress in Fabrication and Characterization of Vertical GaN Power Devices
Robert Kaplar , Andrew Binder , Mary Crawford , Andrew Allerman
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States) ( SAND2022-1974C)
2022
Recent Progress in Vertical Gallium Nitride Power Devices.
Robert Kaplar , Andrew Allerman , Mary Crawford , Brendan Gunning
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States) ( SAND2021-14995C)
2021
Vertical GaN PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics.
Robert Kaplar , Andrew Allerman , Mary Crawford , Brendan Gunning
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States) ( SAND2021-12549C)
2021