Man Hoi Wong
机构: Associate Professor, ECE, Hong Kong University of Science and Technology
每年引用次数
引用次数
引用: 7,086
H-指数: 44
I10-指数 : 79
出版物: 232
A bottom-up approach to nanotechnology using DNA
Nadrian Seeman , X. Yang , H. Yan , Ruojie Sha
IBC Libraries 45 -58
3
1998
Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
Man Hoi Wong , Yoshiaki Nakata , Akito Kuramata , Shigenobu Yamakoshi
Applied Physics Express 10 ( 4) 041101
66
2017
New motifs in DNA nanotechnology
Nadrian C Seeman , Hui Wang , Xiaoping Yang , Furong Liu
Nanotechnology 9 ( 3) 257 -273
113
1998
Depletion-mode Ga2O3 MOSFETs on β-Ga2O3 (010) substrates with Si-ion-implanted channel and contacts
Masataka Higashiwaki , Kohei Sasaki , Man Hoi Wong , Takafumi Kamimura
2013 IEEE International Electron Devices Meeting
36
2013
Invited: Process and Characterization of Vertical Ga 2 O 3 Transistors
Masataka Higashiwaki , Man Hoi Wong , Ken Goto , Hisashi Murakami
international meeting for future of electron devices, kansai
2019
Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors
Man Hoi Wong , Uttam Singisetti , Jing Lu , James S. Speck
IEEE Transactions on Electron Devices 59 ( 11) 2988 -2995
12
2012
Nitrogen-Doped Channel $\beta$ -Ga 2 O 3 MOSFET with Normally-Off Operation
Takafumi Kamimura , Yoshiaki Nakata , Man Hoi Wong , Phuc Hong Than
international conference on indium phosphide and related materials
2019
Dynamic $\mathrm{R}_{\mathrm{ON}}$ in $\beta$ -Ga 2 O 3 MOSFET Power Devices
Taylor Moule , Manikant Singh , James Pomeroy , Serge Karboyan
international conference on indium phosphide and related materials
2019
$\beta$ -Ga 2 O 3 MOSFETs with Nitrogen-Ion-Implanted Back-Barrier: DC Performance and Trapping Effects
Ken Goto , Hisashi Murakami , Yoshinao Kumagai , Masataka Higashiwaki
international conference on indium phosphide and related materials
2019
Invited) Fundamentals and Process Technologies of Current Aperture Vertical Ga2O3 MOSFETs
Man Hoi Wong , Ken Goto , Hisashi Murakami , Yoshinao Kumagai
ECS Meeting Abstracts ( 23) 1327 -1327
2020
RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation
Seshadri Kolluri , David F. Brown , Man Hoi Wong , S. Dasgupta
IEEE Electron Device Letters 32 ( 2) 134 -136
11
2011
Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$ , and 0.66- $\Omega\cdot \hbox{mm}$ $R_{\rm on}$
Uttam Singisetti , Man Hoi Wong , James S. Speck , Umesh K. Mishra
IEEE Electron Device Letters 33 ( 1) 26 -28
30
2012
Current Aperture Vertical $\beta$ -Ga 2 O 3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping
Man Hoi Wong , Ken Goto , Hisashi Murakami , Yoshinao Kumagai
IEEE Electron Device Letters 40 ( 3) 431 -434
44
2019
Vertical Ga 2 O 3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation
Chia-Hung Lin , Yohei Yuda , Man Hoi Wong , Mayuko Sato
IEEE Electron Device Letters 40 ( 9) 1487 -1490
37
2019
Enhancement-Mode $\beta$ -Ga 2 O 3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker
Man Hoi Wong , Hisashi Murakami , Yoshinao Kumagai , Masataka Higashiwaki
IEEE Electron Device Letters 41 ( 2) 296 -299
14
2020
Field-Plated Ga 2 O 3 MOSFETs With a Breakdown Voltage of Over 750 V
Man Hoi Wong , Kohei Sasaki , Akito Kuramata , Shigenobu Yamakoshi
IEEE Electron Device Letters 37 ( 2) 212 -215
473
2016
[IEEE 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010 - Anaheim, CA, USA (2010.05.23-2010.05.28)] 2010 IEEE MTT-S International Microwave Symposium - N-polar GaN-based MIS-HEMTs for mixed signal applications
Umesh K. Mishra , Man Hoi Wong , Nidhi , Sansaptak Dasgupta
Smpte Journal 1130 -1133
2010
High Breakdown Voltage $\beta$-Ga2O3 Schottky Diodes
Man Hoi Wong
Smpte Journal
2023
Vertical $\beta$-Ga₂O₃ power transistors: A review
Man Hoi Wong , Masataka Higashiwaki
IEEE Transactions on Electron Devices 67 ( 10) 3925 -3937
65
2020
on $\beta$-Ga2O3 (010) substrates and temperature dependence of their device characteristics
Masataka Higashiwaki , Kohei Sasaki , Takafumi Kamimura , Man Hoi Wong
Applied Physics Letters 103 123511
20
2013
Masataka Higashiwaki Umesh Mishra Jim Speck Stacia Keller Uttam Singisetti Siddharth Rajan Steven DenBaars David Brown Stephen W. Kaun Keita Konishi George Malliaras Sansaptak Dasgupta Richard Hill Tomás Palacios Alessandro Chini Jing Lu Srabanti Chowdhury Rongming Chu Aaron Arehart Seshadri K Kolluri