Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

Stephen W. Kaun , Peter G. Burke , Man Hoi Wong , Erin C. H. Kyle
Applied Physics Letters 101 ( 26) 262102

78
2012
Depletion-mode Ga 2 O 3 MOSFETs

Masataka Higashiwaki , Kohei Sasaki , Takafumi Kamimura , Man Hoi Wong
device research conference 1 -2

13
2013
Radiation hardness of Ga 2 O 3 MOSFETs against gamma-ray irradiation

Man Hoi Wong , Akinori Takeyama , Takahiro Makino , Takeshi Ohshima
device research conference 1 -2

1
2017
First demonstration of vertical Ga 2 O 3 MOSFET: Planar structure with a current aperture

Man Hoi Wong , Ken Goto , Akito Kuramata , Shigenobu Yamakoshi
device research conference 1 -2

10
2017
Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

Man Hoi Wong , Yi Pei , Rongming Chu , Siddharth Rajan
device research conference 201 -202

2008
High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE

Man Hoi Wong , Yi Pei , David F. Brown , Stacia Keller
device research conference 157 -158

2009
Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth

Uttam Singisetti , Man Hoi Wong , Sansaptak Dasgupta , Nidhi
device research conference 191 -192

2
2010
Dispersion-free AlGaN/GaN CAVET with low R on achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer

Srabanti Chowdhury , Man Hoi Wong , Brian L. Swenson , Umesh K. Mishra
device research conference 201 -202

4
2010
Anomalous output conductance in N-polar GaN-based MIS-HEMTs

Man Hoi Wong , Uttam Singisetti , Jing Lu , James S. Speck
device research conference 211 -212

4
2011
Polarity inversion of N-face GaN using an aluminum oxide interlayer

Man Hoi Wong , Feng Wu , James S. Speck , Umesh K. Mishra
Journal of Applied Physics 108 ( 12) 123710

37
2010
Charge transport in doped organic semiconductors

Yulong Shen , Kenneth Diest , Man Hoi Wong , Bing R. Hsieh
Physical Review B 68 ( 8) 081204

50
2003
Charge injection in doped organic semiconductors

A. R. Hosseini , Man Hoi Wong , Yulong Shen , George G. Malliaras
Journal of Applied Physics 97 ( 2) 023705

36
2005
Characterization of trap states in buried nitrogen-implanted β-Ga2O3

Abhishek Mishra , Taylor Moule , Michael J Uren , Man Hoi Wong
Applied Physics Letters 117 ( 24) 243505

7
2020
Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs

Man Hoi Wong , Hisashi Murakami , Yoshinao Kumagai , Masataka Higashiwaki
Applied Physics Letters 118 ( 1) 012102

14
2021
Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

Derek W Johnson , Pradhyumna Ravikirthi , Jae Woo Suh , Rinus TP Lee
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32 ( 3) 030606

3
2014
Atom-Probe Tomography of compound semiconductors for photovoltaic and light-emitting device applications

Pyuck-Pa Choi , Oana Cojocaru-Mirédin , Daniel Abou-Ras , Raquel Caballero
Microscopy Today 20 ( 3) 18 -24

23
2012
Vertical Gallium Oxide Transistors with Current Aperture Formed Using Nitrogen-Ion Implantation Process

Masataka Higashiwaki , Man Hoi Wong , Ken Goto , Hisashi Murakami
ieee electron devices technology and manufacturing conference

4
2020
Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

Derek W. Johnson , Rinus T. P. Lee , Richard J. W. Hill , Man Hoi Wong
IEEE Transactions on Electron Devices 60 ( 10) 3197 -3203

60
2013
Performance Evaluation of In 0.53 Ga 0.47 As Esaki Tunnel Diodes on Silicon and InP Substrates

Paul Thomas , Matthew Filmer , Abhinav Gaur , David J. Pawlik
IEEE Transactions on Electron Devices 62 ( 8) 2450 -2456

10
2015
Large conduction band offset at SiO2/β-Ga2O3 heterojunction determined by X-ray photoelectron spectroscopy

Keita Konishi , Takafumi Kamimura , Man Hoi Wong , Kohei Sasaki
Physica Status Solidi B-basic Solid State Physics 253 ( 4) 623 -625

66
2016