Dispersion-free AlGaN/GaN CAVET with low R on achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer

摘要: GaN-based power transistors are rapidly developing as a contender for application in next generation high efficiency electronics. They either lateral devices like HEMTs or vertical of the form Current Aperture Vertical Electron Transistor (CAVET) [1, 2]. A CAVET (Fig.1) is device with source and gate on top current aperture that allows to flow vertically down from drain. It has blocking layer (CBL) block flowing through any other path but aperture. The process fabricating illustrated figure 2. One way achieve by implanting [Mg]-ion. However difficulty using Mg-implanted barrier was unintentional diffusion Mg into overlying channel region (see Fig.3). This caused significant threshold voltage shift many cases electrons were trapped completely depleted diffusing acceptors. In this paper we report successfully addressing critical problem MBE re-grow containing 2DEG n drift grown MOCVD resulting free dispersion (80µs pulse width) R less than 2.5 mΩ-cm2. Here advantages MBE, low growth temperature hence suppressed diffusion, combined MOCVD, rate purity material necessary thick support required