Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer
作者： Christophe Hurni , Ilan Ben-Yaacov , Ramya Yeluri , Umesh K. Mishra , Srabanti Chowdhury
DOI:
关键词: Doping 、 Current (fluid) 、 Aperture 、 Blocking (radio) 、 Layer (electronics) 、 Optoelectronics 、 Transistor 、 Molecular beam epitaxy 、 Materials science 、 Gallium nitride
摘要: A current aperture vertical electron transistor (CAVET) with ammonia (NH3) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN for purposes. This structure is very advantageous high power switching applications and any device that requires p-GaN its functionality.
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