VERTICAL TRANSISTORS HAVING P-TYPE GALLIUM NITRIDE CURRENT BARRIER LAYERS AND METHODS OF FABRICATING THE SAME
作者： Young Do Jeong , Kwan Hyun Lee , Takeya Motonobu
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摘要: A vertical transistor includes a drain electrode disposed on first region of substrate, drift layer second the substrate spaced apart from region, and P-type gallium nitride current barrier layers comprising aperture between layers. channel is semiconductor configured to induce formation two-dimension electron gas adjacent top surface thereof. Metal contact plugs are in source layer. gate insulation sequentially opposite
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