Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer
作者： Saptarshi Mandal , Anchal Agarwal , Elaheh Ahmadi , K Mahadeva Bhat , Dong Ji
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摘要: … A low temperature annealing process at 735 C was developed for contact alloying to … to that of AlGaN/GaN HEMTs. A Pd/Ni/Au stack was used for the top p-GaN gate. Finally, the …
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