Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

摘要: Carbon tetrabromide (CBr4) was studied as an intentional dopant during rf plasma molecular beam epitaxy of GaN. Secondary ion mass spectroscopy used to quantify incorporation behavior. found readily incorporate under Ga-rich and N-rich growth conditions with no detectable bromine incorporation. The carbon [C] be linearly related the incident CBr4 flux. Reflection high-energy electron diffraction, atomic force microscopy x-ray diffraction were characterize structural quality film’s postgrowth. No deterioration observed for from mid 1017 ∼1019 cm−3. rate also unaffected by doping CBr4. electrical optical behavior co-doping silicon. compensate silicon although exact compensation factor difficult extract data. Photoluminescence performed examine performance films. seen monotonically decrease band edge emission. Properties carbon-doped GaN are interpreted consistent recent theoretical work describing function Fermi level growth.