Gallium vacancies and the yellow luminescence in GaN
作者： Jörg Neugebauer , Chris G. Van de Walle
DOI: 10.1063/1.117767
关键词: Optoelectronics 、 Fermi level 、 Impurity 、 Vacancy defect 、 Luminescence 、 Materials science 、 Acceptor 、 Video Graphics Array 、 Molecular physics 、 Gallium
摘要: … -of-the-art firstprinciples calculations. Detailed analysis of the … the formation energy of a defect or impurity: a low formation … They concluded that the YL results from a recombination …
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sci-hub.se 参考文章(2)
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