An investigation of long and short time-constant persistent photoconductivity in undoped GaN grown by RF-plasma assisted molecular beam epitaxy[Radiofrequency]
作者： A.J. Ptak , V.A. Stoica , L.J. Holbert , M. Moldovan , T.H. Myers
DOI: 10.1557/S1092578300005007
关键词: Luminescence 、 Plasma 、 Time constant 、 Molecular beam epitaxy 、 Photoluminescence 、 Photoconductivity 、 Hydrogen 、 Thin film 、 Optoelectronics 、 Materials science
摘要: Photoconductance decay and spectral photoconductance measurements were made on a set of ten undoped layers GaN grown by rf-plasma MBE. The layers, also characterized Hall, photoluminescence reflectance measurements, represented wide variety in electrical optical properties, several under atomic hydrogen. Spectral indicated transitions at 1.0--1.1, 1.92, 2.15, 3.08 3.2--3.4 eV. All exhibited persistent photoconductivity to some degree. In contrast with previous reports, clear correlation was not observed between yellow luminescence or, indeed, any measurement made. Analysis indicates that more than one type may be present.
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sci-hub.st 参考文章(14)
Jörg Neugebauer, Chris G. Van de Walle, Gallium vacancies and the yellow luminescence in GaN Applied Physics Letters. ,vol. 69, pp. 503- 505 ,(1996) , 10.1063/1.117767
E. Calleja, F. J. Sánchez, D. Basak, M. A. Sánchez-García, E. Muñoz, I. Izpura, F. Calle, J. M. G. Tijero, J. L. Sánchez-Rojas, B. Beaumont, P. Lorenzini, P. Gibart, Yellow luminescence and related deep states in undoped GaN Physical Review B. ,vol. 55, pp. 4689- 4694 ,(1997) , 10.1103/PHYSREVB.55.4689
C. H. Qiu, J. I. Pankove, Deep levels and persistent photoconductivity in GaN thin films Applied Physics Letters. ,vol. 70, pp. 1983- 1985 ,(1997) , 10.1063/1.118799
Michèle T. Hirsch, J. A. Wolk, W. Walukiewicz, E. E. Haller, Persistent photoconductivity in n-type GaN Applied Physics Letters. ,vol. 71, pp. 1098- 1100 ,(1997) , 10.1063/1.119738
H. M. Chen, Y. F. Chen, M. C. Lee, M. S. Feng, Persistent photoconductivity in n-type GaN Journal of Applied Physics. ,vol. 82, pp. 899- 901 ,(1997) , 10.1063/1.365859
C. H. Qiu, C. Hoggatt, W. Melton, M. W. Leksono, J. I. Pankove, Study of defect states in GaN films by photoconductivity measurement Applied Physics Letters. ,vol. 66, pp. 2712- 2714 ,(1995) , 10.1063/1.113497
Annamraju Kasi Viswanath, Joo In Lee, Sungkyu Yu, Dongho Kim, Yoonho Choi, Chang-hee Hong, None, Photoluminescence studies of excitonic transitions in GaN epitaxial layers Journal of Applied Physics. ,vol. 84, pp. 3848- 3859 ,(1998) , 10.1063/1.368564
G. Beadie, W. S. Rabinovich, A. E. Wickenden, D. D. Koleske, S. C. Binari, J. A. Freitas, Persistent photoconductivity in n-type GaN Applied Physics Letters. ,vol. 71, pp. 1092- 1094 ,(1997) , 10.1063/1.119924
T. H. Myers, M. R. Millecchia, A. J. Ptak, K. S. Ziemer, C. D. Stinespring, Influence of active nitrogen species on high temperature limitations for (0001_) GaN growth by rf plasma-assisted molecular beam epitaxy Journal of Vacuum Science & Technology B. ,vol. 17, pp. 1654- 1658 ,(1999) , 10.1116/1.590805
J. I. Pankove, J. T. Torvik, C.-H. Qiu, I. Grzegory, S. Porowski, P. Quigley, B. Martin, Molecular doping of gallium nitride Applied Physics Letters. ,vol. 74, pp. 416- 418 ,(1999) , 10.1063/1.123046