Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation

L. Shen , L. McCarthy , T. Palacios , M.h. Wong
device research conference 101 -102

2006
Polarization-induced barriers for N-face nitride-based electronics

Umesh K Mishra , Tomas A Palacios Gutierrez , Man-Hoi Wong

54
2011
Application of Inline X-ray Metrology for Defect Characterization of III-V/Si Heterostructures

PY Hung , Matthew Wormington , Kevin Matney , Paul Ryan
ECS Transactions 50 ( 6) 341 -350

4
2013
Application of Inline X-ray Metrology for Defect Characterization of III-V/Si Heterostructures

Pui Yee PY Hung , Matthew Wormington , Kevin Matney , Paul Ryan
ECS Meeting Abstracts ( 41) 3026 -3026

2012
Optical and Electrical Device Application of Gallium Oxide Single Crystal

AKITO KURAMATA , KAZUYUKI IIZUKA , KOHEI SASAKI , KIMIAKI KOSHI
日本結晶成長学会誌 (CD-ROM) 42 ( 2) 130 -140

7
2015
Optimal device architecture and hetero-integration scheme for III–V CMOS

Ze Yuan , Archana Kumar , Chien-Yu Chen , Aneesh Nainani
symposium on vlsi technology

2
2013
High Voltage GaN Technology in a Silicon CMOS Environment: Challenges and Opportunities

Derek W. Johnson , H. Rusty Harris , Richard J.W. Hill , Rinus T.P. Lee
224th ECS Meeting (October 27 – November 1, 2013) ( 25) 1935 -1935

2013
Characterization and Suppression of Anti-Phase-Boundary Defects in GA-AS-ON-SI Films Using SHG and Aspect-Ratio-Trapping

Farbod Shafiei , Ming Lei , Michael Downer , Man Hoi Wong
Bulletin of the American Physical Society 2014

2014
QMSA Measurements of III-V Heterostructures on Silicon

Ravi Droopad , Thiess Cunningham , Man Hoi Wong , Richard Hill
Bulletin of the American Physical Society 57 ( 2)

2012
Band alignment at SiO2/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy

Shigenobu Yamakoshi , Masataka Higashiwaki , Kohei Sasaki , Keita Konishi
IEICE Technical Report; IEICE Tech. Rep. 115 ( 156) 21 -24

2015
Optical evolution of dislocation speckle imaging inside and outside of thin films

Tommaso Orzali , Farbod Shafiei , Alexey Vert , Michael Downer
APS 2019

2019
Light localization in disordered medium by scattering dislocation sites

Tommaso Orzali , Farbod Shafiei , Michael Downer , Man Hoi Wong
APS 2019

2019
Light Scattering and Localization by Dislocation Scattering Sites

Tommaso Orzali , Farbod Shafiei , Andrea Alu , PY Hung
Bulletin of the American Physical Society

2020
Effect of thermal annealing on photoexcited carriers in nitrogen-ion-implanted β-Ga2O3 crystals detected by photocurrent measurement

Masataka Higashiwaki , Tohru Honda , Tomohiro Yamaguchi , Takeyoshi Onuma
AIP Advances 11 ( 3) 035237

2021
N-polar III-nitride transistors

Man Hoi Wong , Umesh K. Mishra
Elsevier 102 329 -395

5
2013
Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source

Man Hoi Wong , Feng Wu , Christophe A. Hurni , Soojeong Choi
Applied Physics Letters 100 ( 7) 072107

35
2012
Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Stephen W. Kaun , Man Hoi Wong , Umesh K. Mishra , James S. Speck
Applied Physics Letters 100 ( 26) 262102

43
2012
Interface roughness scattering in ultra-thin N-polar GaN quantum well channels

Uttam Singisetti , Man Hoi Wong , Umesh K. Mishra
Applied Physics Letters 101 ( 1) 012101

17
2012
High-performance N-polar GaN enhancement-mode device technology

Uttam Singisetti , Man Hoi Wong , Umesh K Mishra
Semiconductor Science and Technology 28 ( 7) 074006

17
2013
Molecular beam epitaxy for high-performance Ga-face GaN electron devices

Stephen W Kaun , Man Hoi Wong , Umesh K Mishra , James S Speck
Semiconductor Science and Technology 28 ( 7) 074001

86
2013