Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$ , and 0.66- $\Omega\cdot \hbox{mm}$ $R_{\rm on}$
作者： Uttam Singisetti , Man Hoi Wong , James S. Speck , Umesh K. Mishra
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摘要: We report enhanced dc and small-signal RF performance of enhancement-mode (E-mode) metal-oxide-semiconductor heterojunction field-effect transistors (MOS-HFETs) in N-polar GaN technology with an ultrathin 5-nm channel graded AlGaN back-barrier structure a record on-resistance (Ron) 0.66 Ω·mm. The device has maximum drain current (Id) 1.15 A/mm, peak transconductance (gm) 510 mS/mm, current-gain cutoff frequency (ft) 122 GHz, positive threshold voltage (Vth) 1.6 V. shows improved saturation pinchoff characteristics compared to the previously reported E-mode HFETs Ion/Ioff ratio 2.2 × 105.
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