Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
作者： Uttam Singisetti , Man Hoi Wong , Sansaptak Dasgupta , James S. Speck , Umesh K. Mishra
关键词: Optoelectronics 、 Metal insulator 、 Current (fluid) 、 Cutoff frequency 、 Polar 、 Semiconductor 、 Field-effect transistor 、 Transconductance 、 Materials science 、 Gate dielectric
摘要: We report the small-signal high-frequency performance of novel enhancement-mode N-polar GaN metal–insulator–semiconductor field effect transistors with a peak short-circuit current gain cutoff frequency (ft) 120 GHz for 70-nm gate length device. The device has an 8-nm channel AlN back barrier and 5-nm SiNx dielectric. These devices show drain 0.74 A/mm transconductance 260 mS/mm at bias 3.0 V. This is first demonstration operation devices.
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