N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al 2 O 3 based etch stop technology for the gate recess
作者： Seshadri Kolluri , Stacia Keller , Steven P. DenBaars , Umesh K. Mishra
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摘要: This paper presents the X-band and C-band power performance of MOCVD grown N-polar AlGaN/GaN MIS-HEMTs on semi-insulating SiC substrates. Additionally, an Al 2 O 3 based etch stop technology was demonstrated for improving manufacturability GaN HEMTs with Si x N y passivation. The reported output densities 16.7 W/mm at 10 GHz 20.7 4 represent highest values so far device, both these frequencies.
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