Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures
作者： Elaheh Ahmadi , Stacia Keller , Umesh K. Mishra
DOI: 10.1063/1.4962321
关键词: Nanotechnology 、 Induced high electron mobility transistor 、 Transistor 、 Optoelectronics 、 Charge density 、 Heterojunction 、 Scattering 、 Wide-bandgap semiconductor 、 High-electron-mobility transistor 、 Materials science 、 Electron mobility
摘要: There are three possible ways of reducing the charge density (ns) in the N-polar high electron mobility transistors (HEMT) structures, by decreasing the channel thickness, applying reverse gate bias, or modifying the back-barrier. Understanding the behavior of 2DEG mobility as a function of ns is essential to design high performance HEMT devices. Experimental data show that in the N-polar HEMT structures, the 2DEG mobility reduces as the ns decreases by applying reverse gate bias or decreasing channel thickness, whereas …
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