Electron transport in N-polar GaN-based heterostructures
作者： Alexa Rakoski , Sandra Diez , Haoran Li , Stacia Keller , Elaheh Ahmadi
DOI: 10.1063/1.5090233
关键词:
摘要: Electron transport in N-polar GaN-based high-electron-mobility transistor (HEMT) structures with a combination of In0.18Al0.82N-AlN as the barrier was studied via temperature-dependent van der Pauw Hall and Shubnikov de Haas measurements. In contrast to Ga-polar HEMT structures, no persistent photoconductivity could be detected. sample 10 nm thick InAlN, only one oscillation frequency observed, demonstrating that single sublevel is present. From oscillations, two-dimensional electron gas carrier density 8.54 × 1012 cm−2 mobility 4970 cm2/V s were extracted at 1.7 K. This further investigated using ionic liquid gating. The charge varied from 7.5 × 1012 cm−2 9.6 × 1012 cm−2. significantly declined decreasing density. where typically increases slightly decreases.Electron decreases.
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