Haoran Li
机构: Ph.D. of University of California, Santa Barbara
每年引用次数
引用次数
引用: 1,935
H-指数: 25
I10-指数 : 46
出版物: 76
Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition
N Hatui , A Krishna , H Li , C Gupta
Semiconductor Science and Technology 35 ( 9) 095002
3
2020
2014 IEEE Lester Eastman Conference Best Student Paper Award
Cheng-Ying Huang , Sanghoon Lee , Varistha Chobpattana , Susanne Stemmer
Mm-wave N-polar GaN deep recess MISHEMT delivering over 7 W/mm and 25% power-added efficiency at 94 GHz
B Romanczyk , H Li , M Guidry , S Wienecke
Proc. Int. Symp. Compound Semiconductor (ISCS)
4
2017
2016 Lester Eastman Conference on High Performance Devices (LEC)
S Wienecke , B Romanczyk , M Guidry , H Li
LANTHANUM ALUMINATE ON SILICON FOR ALTERNATIVE GATE DIELECTRIC APPLICATIONS
LF Edge , V Vaithyanathan , J Lettieri , DG Schlom
N-polar deep recess HEMTs for W-band power applications
S Wienecke , B Romanczyk , M Guidry , H Li
Proc. 42nd Int. Symp. Compound Semiconductors (ISCS) 197 -198
8
2015
Measurement of the hot electron mean free path in GaN
Donald J Suntrup III , Geetak Gupta , Haoran Li , Stacia Keller
Bulletin of the American Physical Society
1
2015
Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology
Haoran Li , Srabanti Chowdhury , Kelly Woo , Mohamadali Malakoutian
Crystal Growth & Design 21 ( 5) 2624 -2632
20
2021
Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN
Islam Sayed , Wenjian Liu , Silvia Chan , Chirag Gupta
Applied Physics Letters 115 ( 3) 032103
15
2019
Ultrathin InAs-channel MOSFETs on Si substrates
Cheng-Ying Huang , Xinyu Bao , Zhiyuan Ye , Sanghoon Lee
international symposium on vlsi technology, systems, and applications 1 -2
5
2015
pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption.
Jianan Wang , Xing Zhang , Hua Li , Constance Wang
Journal of Colloid and Interface Science 583 331 -339
2
2021
Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull
Matthew Guidry , Steven Wienecke , Brian Romanczyk , Haoran Li
international microwave symposium 1 -4
14
2016
Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy
Karine Hestroffer , Cory Lund , Onur Koksaldi , Haoran Li
Journal of Crystal Growth 465 55 -59
9
2017
Growth of N-polar GaN by ammonia molecular beam epitaxy
M.N. Fireman , Haoran Li , Stacia Keller , Umesh K. Mishra
Journal of Crystal Growth 481 65 -70
6
2018
High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion
Xun Zheng , Haoran Li , Elaheh Ahmadi , Karine Hestroffer
2016 Lester Eastman Conference (LEC) 42 -45
10
2016
Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor
Donald J Suntrup III , Geetak Gupta , Haoran Li , Stacia Keller
Semiconductor Science and Technology 30 ( 10) 105003
2
2015
Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells
Karine Hestroffer , Feng Wu , Haoran Li , Cory Lund
Semiconductor Science and Technology 30 ( 10) 105015
53
2015
Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures
Haoran Li , Stacia Keller , Silvia H Chan , Jing Lu
Semiconductor Science and Technology 30 ( 5) 055015
18
2015
N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates
Stacia Keller , James S Speck , Umesh K Mishra , Elaheh Ahmadi
Semiconductor Science and Technology 30 ( 5) 055012
21
2015
High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces
Silvia H Chan , Stacia Keller , Maher Tahhan , Haoran Li
Semiconductor Science and Technology 31 ( 6) 065008
10
2016