Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy
作者： Karine Hestroffer , Cory Lund , Onur Koksaldi , Haoran Li , Gordon Schmidt
DOI: 10.1016/J.JCRYSGRO.2017.02.037
关键词: Finger structure 、 Vicinal 、 Molecular beam epitaxy 、 Plasma 、 Morphology (linguistics) 、 Optoelectronics 、 Nanoscopic scale 、 Cathodoluminescence 、 Materials science 、 Photoluminescence
摘要: Abstract This work reports on compositionally graded ( 0 1 ¯ ) N-polar In x Ga 1−x N layers. The InGaN grades with different final compositions f up to 0.25 were grown by plasma-assisted molecular beam epitaxy vicinal GaN base layers a miscut angle of 4° towards the m -direction. When increasing surface morphology evolved from an interlacing finger structure, attributed Ehrlich-Schwobel effect, fully strain-relaxed columnar features. Regardless crystal and strain state each sample exhibited bright photoluminescence signal at room temperature spanning whole visible range. Cross-sectional nanoscale cathodoluminescence evidenced red-shift luminesced 420 580 nm along grade also showed strong lateral emission inhomogeneities.
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