Growth of high quality (In,Ga)N films on O-face ZnO substrates by plasma-assisted molecular beam epitaxy

摘要: Epitaxial growth of (In,Ga)N films on O-face ZnO substrates was studied via plasma-assisted molecular beam epitaxy. Atomically smooth GaN films, showing step edges, were grown at low temperatures to suppress the interfacial reaction between nitrides and substrate elevated using metal-enhanced High-quality ∼300 nm-thick with In content varying from 11% 23% demonstrated ∼2 monolayer-thick temperature as buffer layer. A clear redshift in photoluminescence observed by decreasing temperature. For first time, we achieved an atomically surface 300 ZnO, edges. The morphology, however, eventually degraded after exposure ambient due strain, which perhaps facilitated formation oxide These results are promising for optoelectronics electronics applications since eventual degradation morphology can be mitigated strain engineering or passivation.