Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates
作者： Takuya Ozaki , Yoshinori Takagi , Junichi Nishinaka , Mitsuru Funato , Yoichi Kawakami
关键词:
摘要: ScAlMgO4 (SCAM) (0001) can be used for metalorganic vapor phase epitaxy (MOVPE) of GaN and lattice-matched In0.17Ga0.83N. grown on SCAM(0001) via a low-temperature buffer layer shows excellent structural quality, indicating that the GaN-SCAM interface is stable during MOVPE. For InGaN SCAM(0001), at lower temperature effectively improves surface luminescence uniformity. The nearly unstrained exhibits photoluminescence peaking 505 nm room temperature. These achievements indicate In0.17Ga0.83N/SCAM templates may pave way toward longer-wavelength light-emitting -detecting devices using with higher In contents.
harvard.edu
sci-hub.se 参考文章(22)
Akihiro Mihara, Yangdong Zheng, Naoteru Shigekawa, Akio Yamamoto, Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal--Organic Vapor Phase Epitaxy Japanese Journal of Applied Physics. ,vol. 52, ,(2013)
Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka, Low temperature epitaxial growth of In0.25Ga0.75N on lattice-matched ZnO by pulsed laser deposition Journal of Applied Physics. ,vol. 99, pp. 123513- ,(2006) , 10.1063/1.2206883
Shimpei Takagi, Yohei Enya, Takashi Kyono, Masahiro Adachi, Yusuke Yoshizumi, Takamichi Sumitomo, Yuichiro Yamanaka, Tetsuya Kumano, Shinji Tokuyama, Kazuhide Sumiyoshi, Nobuhiro Saga, Masaki Ueno, Koji Katayama, Takatoshi Ikegami, Takao Nakamura, Katsunori Yanashima, Hiroshi Nakajima, Kunihiko Tasai, Kaori Naganuma, Noriyuki Fuutagawa, Yoshiro Takiguchi, Tatsushi Hamaguchi, Masao Ikeda, High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm Applied Physics Express. ,vol. 5, pp. 082102- ,(2012) , 10.1143/APEX.5.082102
L. Liu, J.H. Edgar, Substrates for gallium nitride epitaxy Materials Science & Engineering R-reports. ,vol. 37, pp. 61- 127 ,(2002) , 10.1016/S0927-796X(02)00008-6
Shen-Jie Wang, Nola Li, Eun-Hyun Park, Zhe Chuan Feng, Adriana Valencia, Jeff Nause, Matthew Kane, Chris Summers, Ian Ferguson, MOCVD growth of GaN‐based materials on ZnO substrates Physica Status Solidi (c). ,vol. 5, pp. 1736- 1739 ,(2008) , 10.1002/PSSC.200778614
Huili Tang, Jun Xu, Yongjun Dong, Hui Lin, Feng Wu, Study on growth and characterization of ScAlMgO4 substrate crystal Journal of Alloys and Compounds. ,vol. 471, ,(2009) , 10.1016/J.JALLCOM.2008.04.036
Noboru Kimizuka, Takahiko Mohri, Structural classification ofRAO3(MO)n compounds (R =Sc, In, Y, or lanthanides; A =Fe(III), Ga, Cr, or Al; M =divalent cation; n = 1–11) Journal of Solid State Chemistry. ,vol. 78, pp. 98- 107 ,(1989) , 10.1016/0022-4596(89)90132-1
H. K. Cho, J. Y. Lee, G. M. Yang, C. S. Kim, Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density Applied Physics Letters. ,vol. 79, pp. 215- 217 ,(2001) , 10.1063/1.1384906
A. Ohtomo, K. Tamura, K. Saikusa, K. Takahashi, T. Makino, Y. Segawa, H. Koinuma, M. Kawasaki, Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substrates Applied Physics Letters. ,vol. 75, pp. 2635- 2637 ,(1999) , 10.1063/1.125102
R. W. Martin, P. G. Middleton, K. P. O’Donnell, W. Van der Stricht, Exciton localization and the Stokes’ shift in InGaN epilayers Applied Physics Letters. ,vol. 74, pp. 263- 265 ,(1999) , 10.1063/1.123275