Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density
作者： H. K. Cho , J. Y. Lee , G. M. Yang , C. S. Kim
DOI: 10.1063/1.1384906
关键词:
摘要: V-defect formation of the InxGa1−xN/GaN multiple quantum wells (MQWs) grown on GaN layers with different threading dislocation (TD) densities was investigated. From cross-sectional transmission electron microscopy, we found that all V defects are not always connected TDs at their bottom. By increasing indium composition in InxGa1−xN well layer or decreasing TD density thick layer, many generated from stacking mismatch boundaries induced by faults which formed within MQW due to strain relaxation. Also, affects only origin but also critical defects.
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