Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions
作者： Hyung Koun Cho , Jeong Yong Lee , Chi Sun Kim , Gye Mo Yang
DOI: 10.1007/S11664-001-0123-Y
关键词: Tetragonal crystal system 、 Superlattice 、 Photoluminescence 、 Crystallography 、 Indium 、 Diffraction 、 Optoelectronics 、 Transmission electron microscopy 、 Solid-state physics 、 Crystallographic defect 、 Materials science
摘要: We have studied the influence of indium (In) composition on structural and optical properties Inx Ga1−xN/GaN multiple quantum wells (MQWs) with In compositions more than 25% by means high-resolution x-ray diffraction (HRXRD), photoluminescence (PL), transmission electron microscopy (TEM). With increasing composition, quality deterioration is observed from broadening full width athalf maximum HRXRD superlattice peak, broad emission peaks oflow temperature PL, increase defect density in GaN capping layers InGaN/GaN MQWs. V-defects, dislocations, two types tetragonal shape defects are within MQW 33% high resolution TEM. addition, we found that V-defects result different growth rates barriers according to degree bending InGaN well layers, which changes period thickness might be source InxGa1−xN/GaN MQWs compositions.
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