Compositional dependence of the strain-free optical band gap in InxGa1−xN layers
作者： S. Pereira , M. R. Correia , T. Monteiro , E. Pereira , E. Alves
DOI: 10.1063/1.1358368
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摘要: The effect of strain on the compositional and optical properties a set epitaxial single layers InxGa1−xN was studied. Indium content measured free from effects by Rutherford backscattering spectrometry. Accurate knowledge In mole fraction, combined with x-ray diffraction measurements, allows perpendicular (ezz) to be evaluated. Optical band gaps were determined absorption spectroscopy corrected for strain. Following this approach, dependence gap in alloys x⩽0.25. Our results indicate an “anomalous,” linear, energy content, at room temperature: Eg(x)=3.39–3.57x eV. Extension behavior higher concentrations is discussed basis reported results.
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