Raman Scattering Study of In x Ga 1 −x N Alloys with Low Indium Compositions
作者： Long Teng , Rong Zhang , Zi-Li Xie , Tao Tao , Zhao Zhang
DOI: 10.1088/0256-307X/29/2/027803
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摘要: InxGa1−xN alloys with low indium composition x in the range 0.13 ≤ 0.23 are systematically studied mainly based on a Raman scattering technique. Scanning electron microscopy and x-ray diffraction results show that our samples can be divided into two groups: pseudomorphic (0.13 0.16) relaxed (0.18 0.23). The prominent enhancement of A1 longitudinal-optical (LO) mode is found 325 nm laser excitation. For samples, frequencies phonons agree well theoretical predictions, which verifies fully strained. linear dependence frequency obtained: Ω0(x) = (740.8 ± 3.3) − (143.1 16.0)x, evidence one-mode behavior ternary alloys. Residual strains these partially also evaluated.
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