Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology
作者： P. V. Seredin , D. L. Goloshchapov , D. S. Zolotukhin , A. S. Lenshin , A. N. Lukin
DOI: 10.1134/S1063782619010172
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摘要: Integrated heterostructures exhibiting a nanocolumnar morphology of the InxGa1 –xN film are grown on single-crystal silicon substrate (c-Si(111)) and with nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy plasma activation nitrogen. Using complex spectroscopic methods analysis, it is shown that growth nanocolumns por-Si layer offer number advantages over c-Si substrate. Raman ultraviolet spectroscopy data support inference about nanocolumn structure agree previously obtained X-ray diffraction (XRD) indicative strained, unrelaxed state layer. The positively influences optical properties heterostructures. At same half-width emission line in photoluminescence spectrum, intensity for heterostructure sample ~25% higher than
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