Optoelectronic Properties of InGaN SQW with Embedded AlGaN δ-Layer
作者： Jongwoon Park , Akio Kaneta , Mitsuru Funato , Yoichi Kawakami
DOI: 10.1109/NUSOD.2006.306715
关键词:
摘要: We investigate the carrier transport and optical properties of a thick InGaN single quantum well (SQW) where an AlGaN δ-layer is embedded. It shown that results photoluminescence (PL) measurements are consistent with numerical predictions.
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