A two-dimensional device simulator of semiconductor lasers
作者： T. Ohtoshi , K. Yamaguchi , C. Nagaoka , T. Uda , Y. Murayama
DOI: 10.1016/0038-1101(87)90222-X
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摘要: Abstract A two-dimensional simulator for aid in designing semiconductor lasers is developed. Poisson's equation and the current continuity equations electrons holes as well wave rate photons are numerically solved. Heterojunctions carrier degeneracy rigorously treated, analytical results on channeled-substrate-planar presented to demonstrate simulator. Reasonable agreement found between calculated experimental results, clarify precisely operation mechanism of lasers. The present work enables computer simulation first time be a practical design research development various kinds
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