A self-consistent iterative scheme for one-dimensional steady state transistor calculations
作者： H.K. Gummel
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摘要: A self-consistent iterative scheme for the numerical calculation of dc potentials and currents in a one-dimensional transistor model is presented. Boundary conditions are applied only at points representing contacts. Input data are: doping profile, parameters governing excess carrier recombination, describing dependence mobility on electric field, emitter collector voltages, trial solution electrostatic potential. The major limitation present approach results from use Boltzmann rather than Fermi statistics. Convergence iteration good low moderate injection levels.
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